Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier

Document Type : Articles

Authors

1 Faculty of Engineering Science and Engineering Physics, Buein Zahra Technical University, Buein Zahra, Qazvin, Iran

2 Engineering Department, Shahid Beheshti University, G.C., P.O. Box 1983969411, Tehran, Iran

10.30495/jopn.2021.4776

Abstract

Abstract The performance characteristics of InGaN double-quantum-well (DQW) laser diodes (LDs) with different last barrier structures are analyzed numerically by Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. Three different kind of structures for last quantum barrier including doped- GaN, doped- AlGaN and GaN/AlGaN superlattice last barrier are used and compared with conventional GaN last barrier in InGaN-based laser diodes. Replacing the conventional GaN last barrier with p-AlGaN increased hole flowing in the active region and consequently the radiative recombination which results in the enhancement of output power. However it caused increasing the threshold current due electron overflowing. For solving this problem, the last barrier structure altered with GaN/AlGaN superlattice. The simulation indicates that the electrical and optical characteristics of LDs with the superlattice last barrier, like output power, differential quantum efficiency (DQE) and slope efficiency, has significantly improved, besides the threshold current decreased. The enhancement is mainly attributed to the improvement of hole injection and the blocking electron overflowing which are caused by the reduction of polarization charges at the interface between the barrier and well, and electron blocking layer (EBL).

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