Document Type : Articles
Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran
Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran.
Institute for Nanoscience and Nanotechnology (INST), Sharif University of Technology, Azadi Avenue, 14588-89694 Tehran, Iran
Organic-inorganic halide perovskite thin film perovskite solar cells are gaining much attention, in recent years. Designing proper electron transport layer (ETL) and hole transport layer (HTL) with high quality to achieve devices with higher efficiency are fundamental. One dimensional (1D) nanostructures are newly introduced materials with high mobility and low recombination rate, which may improve the device performance. In this paper, 1D ZnO nanorods (ZnO-NRs) as well as planar TiO2 are considered as the ETL of the device and their electrical performance are compared with different HTL materials in Sn- and Pb- perovskite. In addition, impact of critical design parameters including absorber thickness, interface defect density, back contact electrode materials on the performance of the device are comprehensively assessed. In this work, the simulations have been carries out using a 1D Solar Cell Capacitance Simulator (SCAPS-1D). The results show that in Sn- perovskite, ZnO-NRs has superior performance in comparison with TiO2 with maximum photon conversion efficiency (PCE) of 16.7 % and short circuit current density of 30.21(mA/cm2). However, in terms of Pb-perovskite planar TiO2 has given the best performance with PCE of 19.6%. The results in this paper pave the way for introducing inexpensive high performance solar cell.