Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study

Document Type : Articles


1 Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran.

2 Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran

3 Department of Chemistry, Yazd Branch, Islamic Azad University, Yazd, Iran

4 Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Islamshahr, Iran


Structural, electronic, and optical properties of one-dimensional (1D) SnGe
and SnC with two types (armchair and zigzag) and different widths are studied by using
first-principles calculations. The atoms of these structures in edges are passivated by
hydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)
are the direct semiconducting and divided into three distinct families W=3p, W=3p+1,
and W=3p+2, (p is a positive integer). By increasing width, the band gaps converge to
1.71 eV and 0.15 eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, the
position of the first peak of the dielectric function in both of them occurs in their value of
direct band gap at أ point. also, the absorption coefficient for 9, 11, 13 A-SnCNRs
displays that there is no absorption at the lower energy range from 0 to 1.2 eV, whereas
absorption characteristics for 9, 11, and 13 A-SnGeNRs appeared at near-infrared to the
visible spectrum. These results can provide important information for the use of Group
IV binary compounds in electronic devices.


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